simple drive requirement small package outline surface mount device 30v n-channel enhancement-mode mosfet features advanced trench process technology high density cell design for ultra low on-resistance 1 2 3 n - channel v ds = 30v r ds(on) , v gs @10v, i ds @8.5a = 38m ? r ds(on) , v gs @4.5v, i ds @5a = 52m ? high power and current handling capability maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current i d 6.9 a pulsed drain current 1) i dm 30 maximum power dissipation ta = 25 o c p d 2 w ta = 75 o c 1.44 operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-case thermal resistance r jc 24 o c/w junction-to-ambient thermal resistance (pcb mounted) 2) r ja 62.5 note: 1. repetitive rating: pulse width limited by the maximum junction temperature 2. 1-in 2 2oz cu pcb board 3. guaranteed by design; not subject to production testing device marking shipping 3000/tape&reel se 4812lt1 n48 ordering information 2012-10 willas electronic corp. sot-23 se4812l t1
electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d 30 = 250ua v drain-source on-state resistance r ds(on) v gs d 35.0 = 4.5v, i = 5a 52.0 m drain-source on-state resistance r ds(on) v gs d 22.0 = 10v, i = 8.5a 38.0 gate threshold voltage v gs(th) v ds =v gs , i d 1 = 250ua 1.5 3 v zero gate voltage drain current i dss v ds 1 = 24v, v gs = 0v ua gate body leakage i gss v gs + 100 = 20v, v ds = 0v na forward transconductance g fs v ds = 5v, i d 15.4 = 6.9a s dynamic 3) total gate charge q g v ds = 15v, i d = 8.5a v gs = 10v 13 20 nc gate-source charge q gs 4.2 gate-drain charge q gd 3.1 turn-on delay time t d(on) v dd = 15v, r l = 15 ? i d = 1a, v gen = 10v r g = 6 ? 9 ns turn-on rise time t r 14 turn-off delay time t d(off) 30 turn-off fall time t f 5 input capacitance c iss v ds = 15v, v gs = 0v f = 1.0 mhz 610 pf output capacitance c oss 100 reverse transfer capacitance c rss 77 source-drain diode max. diode forward current i s 3a diode forward voltage v sd i s = 1a, v 1.3 gs = 0v v note : pulse test: pulse width <= 300us, duty cycle<= 2% 2012-10 willas electronic corp. 30v n-channel enhancement-mode mosfet se4812l t1
figure 1. transfer characteristics figure 2. onregion characteristics figure 3. onresistance versus drain current figure 4. on-resistance vs. gate-to-source voltage typical electrical characteristics vgs, gate-to-source voltage(v) id drain current(a) vds,drain-to-source voltage(v) id, drain current(a) id-drain current(a) rds(on)-on-resistance() 0 0.1 0.2 0.3 0.4 0.5 3 3.2 3. 4 3.6 3.8 4 vgs-gate-to-source voltage(v) rds(on)-on-resistance() id=5a 2012-10 willas electronic corp. 30v n-channel enhancement-mode mosfet se4812l t1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 willas electronic corp. 30v n-channel enhancement-mode mosfet se4812l t1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2. 1 0) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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